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NTHD4502NT1G

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The NTHD4502NT1G from onsemi is a MOSFET with Continous Drain Current 2.9 A, Drain Source Resistance 78 to 140 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for NTHD4502NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHD4502NT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.9 A
  • Drain Source Resistance
    78 to 140 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    3.6 to 7 nC
  • Power Dissipation
    1.13 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Chip
  • Applications
    DC-DC Buck or Boost Converters, Low Side Switching, Optimized for Battery and Low Side Switching Applications in Computing and Portable Equipment

Technical Documents
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