1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTHD4508NT1G

NTHD4508NT1G

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NTHD4508NT1G from onsemi is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 60 to 115 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.2 V. Tags: Surface Mount. More details for NTHD4508NT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTHD4508NT1G
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    60 to 115 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.2 V
  • Gate Charge
    2.6 to 4 nC
  • Power Dissipation
    1.13 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Chip
  • Applications
    DC-DC Buck/Boost Converters, Battery and Low Side Switching in Portable Equipment Such as MP3 Players, Cell Phones, DSCs and PDAs, Level Shifting

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products