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NTHL041N60S5H

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The NTHL041N60S5H from onsemi is a MOSFET with Continous Drain Current 57 A, Drain Source Resistance 32.8 to 41 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.7 to 4.3 V. Tags: Through Hole. More details for NTHL041N60S5H can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHL041N60S5H
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 108 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    57 A
  • Drain Source Resistance
    32.8 to 41 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.7 to 4.3 V
  • Gate Charge
    108 nC
  • Power Dissipation
    329 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247 Long Leads
  • Applications
    Telecom / Server Power Supplies, EV Charger / UPS / Solar / Industrial Power Supplies

Technical Documents
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