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NTHL099N60S5

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The NTHL099N60S5 from onsemi is a MOSFET with Continous Drain Current 33 A, Drain Source Resistance 79.2 to 99 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for NTHL099N60S5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHL099N60S5
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 48 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    33 A
  • Drain Source Resistance
    79.2 to 99 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    48 nC
  • Power Dissipation
    184 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247 Long Leads
  • Applications
    Telecom / Server Power Supplies, EV Charger / UPS / Solar / Industrial Power Supplies

Technical Documents
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