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NTHS4101PT1

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The NTHS4101PT1 from onsemi is a MOSFET with Continous Drain Current -6.7 A, Drain Source Resistance 21 to 52 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 to -0.45 V. Tags: Surface Mount. More details for NTHS4101PT1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHS4101PT1
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.7 A
  • Drain Source Resistance
    21 to 52 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 to -0.45 V
  • Gate Charge
    25 to 35 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ChipFET-8
  • Applications
    Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications, Charge Control in Battery Chargers, Buck and Boost Converters

Technical Documents
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