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NTHS4166NT1G

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The NTHS4166NT1G from onsemi is a MOSFET with Continous Drain Current 6.6 A, Drain Source Resistance 18 to 27 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.3 V. Tags: Surface Mount. More details for NTHS4166NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHS4166NT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 9.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.6 A
  • Drain Source Resistance
    18 to 27 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.3 V
  • Gate Charge
    9.2 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Chip
  • Applications
    Load Switching, DC-DC Converters, Low Side Switching

Technical Documents
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