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NTHS5441T1G

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The NTHS5441T1G from onsemi is a MOSFET with Continous Drain Current -5.3 A, Drain Source Resistance 46 to 86 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.6 V. Tags: Surface Mount. More details for NTHS5441T1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHS5441T1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.3 A
  • Drain Source Resistance
    46 to 86 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.6 V
  • Gate Charge
    9.7 to 22 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ChipFET-8
  • Applications
    Power Management in Portable and Battery-Powered Products i.e., Cellular and Cordless Telephones and PCMCIA Cards

Technical Documents
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