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NTJD4158CT2G

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The NTJD4158CT2G from onsemi is a MOSFET with Continous Drain Current -0.88 to 0.25 A, Drain Source Resistance 215 to 2500 milliohm, Drain Source Breakdown Voltage -20 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.5 to 1.5 V. Tags: Surface Mount. More details for NTJD4158CT2G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTJD4158CT2G
  • Manufacturer
    onsemi
  • Description
    -20 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.88 to 0.25 A
  • Drain Source Resistance
    215 to 2500 milliohm
  • Drain Source Breakdown Voltage
    -20 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.5 to 1.5 V
  • Gate Charge
    0.9 to 3.5 nC
  • Power Dissipation
    0.27 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88 (SOT-363)
  • Applications
    DC-DC Conversion, Load/Power Management, Load Switch, Cell Phones, MP3s, Digital Cameras, PDAs

Technical Documents
View details on the manufacturer's website
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