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NTJS3157NT2G

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The NTJS3157NT2G from onsemi is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 45 to 85 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for NTJS3157NT2G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTJS3157NT2G
  • Manufacturer
    onsemi
  • Description
    -8 to 8 V, 6.9 to 15 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    45 to 85 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    6.9 to 15 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88
  • Applications
    DC-DC Conversion, Low Side Load Switch, Cell Phones, Computing, Digital Cameras, MP3s and PDAs

Technical Documents
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