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NTLJD3119CTAG

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The NTLJD3119CTAG from onsemi is a MOSFET with Continous Drain Current -4.1 to 4.6 A, Drain Source Resistance 37 to 200 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for NTLJD3119CTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJD3119CTAG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.1 to 4.6 A
  • Drain Source Resistance
    37 to 200 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    3.7 to 5.5 nC
  • Power Dissipation
    0.71 to 2.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-6
  • Applications
    Synchronous DC-DC Conversion Circuits, Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives, Color Display and Camera Flash Regulators

Technical Documents
View details on the manufacturer's website
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