1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTLJD3119CTBG

NTLJD3119CTBG

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NTLJD3119CTBG from onsemi is a MOSFET with Continous Drain Current -4.1 to 4.6 A, Drain Source Resistance 37 to 200 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for NTLJD3119CTBG can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTLJD3119CTBG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.1 to 4.6 A
  • Drain Source Resistance
    37 to 200 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    3.7 to 5.5 nC
  • Power Dissipation
    0.71 to 2.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-6
  • Applications
    Synchronous DC-DC Conversion Circuits, Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives, Color Display and Camera Flash Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products