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NTLJF4156NT1G

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The NTLJF4156NT1G from onsemi is a MOSFET with Continous Drain Current 4.6 A, Drain Source Resistance 47 to 250 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for NTLJF4156NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJF4156NT1G
  • Manufacturer
    onsemi
  • Description
    -8 to 8 V, 5.4 to 6.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.6 A
  • Drain Source Resistance
    47 to 250 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    5.4 to 6.5 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-6
  • Applications
    DC-DC Converters, Li-Ion Battery Applications in Cell Phones, PDA’s, Media Players, Color Display and Camera Flash Regulators

Technical Documents
View details on the manufacturer's website
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