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NTLJS2103PTBG

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The NTLJS2103PTBG from onsemi is a MOSFET with Continous Drain Current -7.7 A, Drain Source Resistance 25 to 400 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.8 to -0.3 V. Tags: Surface Mount. More details for NTLJS2103PTBG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJS2103PTBG
  • Manufacturer
    onsemi
  • Description
    -12 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -7.7 A
  • Drain Source Resistance
    25 to 400 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.8 to -0.3 V
  • Gate Charge
    12.8 to 15 nC
  • Power Dissipation
    3.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-6
  • Applications
    High Side Load Switch, DC-DC Converters (Buck and Boost Circuits), Optimized for Battery and Load Management Applications in Portable Equipment, Li-Ion Battery Linear Mode Charging

Technical Documents
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