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NTLJS3D0N02P8ZTAG

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The NTLJS3D0N02P8ZTAG from onsemi is a MOSFET with Continous Drain Current 20.2 A, Drain Source Resistance 3.1 to 14.2 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.2 V. Tags: Surface Mount. More details for NTLJS3D0N02P8ZTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJS3D0N02P8ZTAG
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20.2 A
  • Drain Source Resistance
    3.1 to 14.2 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.2 V
  • Gate Charge
    21 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN6
  • Applications
    Wireless Charging, Power Load Switch, Power Management and Protection, Battery Management, DC-DC Converters

Technical Documents
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