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NTLJS4114NT1G

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The NTLJS4114NT1G from onsemi is a MOSFET with Continous Drain Current 7.8 A, Drain Source Resistance 20.3 to 55 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for NTLJS4114NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJS4114NT1G
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, 8.5 to 13 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.8 A
  • Drain Source Resistance
    20.3 to 55 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    8.5 to 13 nC
  • Power Dissipation
    3.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-6
  • Applications
    DC-DC Conversion, Boost Circuits for LED Backlights, Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDA’s, Media Players, Low Side Load Switch for Noisy Environment

Technical Documents
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