NTLJS4D9N03HTAG

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The NTLJS4D9N03HTAG from onsemi is a MOSFET with Continous Drain Current 15.9 A, Drain Source Resistance 4.7 to 6.1 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.2 to 2.1 V. Tags: Surface Mount. More details for NTLJS4D9N03HTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJS4D9N03HTAG
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15.9 A
  • Drain Source Resistance
    4.7 to 6.1 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.2 to 2.1 V
  • Gate Charge
    6.8 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN6
  • Applications
    DC-DC Converters, Wireless Chargers, Power Load Switch, Power Management and Protection, Battery Management

Technical Documents

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