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NTLJS7D2P02P8ZTAG

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The NTLJS7D2P02P8ZTAG from onsemi is a MOSFET with Continous Drain Current -13.1 A, Drain Source Resistance 7.1 to 11 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 to -0.4 V. Tags: Surface Mount. More details for NTLJS7D2P02P8ZTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLJS7D2P02P8ZTAG
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -13.1 A
  • Drain Source Resistance
    7.1 to 11 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 to -0.4 V
  • Gate Charge
    26.7 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN6
  • Applications
    Battery Management, Protection, Power Load Switch

Technical Documents
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