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NTLUD3A260PZTBG

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The NTLUD3A260PZTBG from onsemi is a MOSFET with Continous Drain Current -2.1 A, Drain Source Resistance 160 to 650 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for NTLUD3A260PZTBG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTLUD3A260PZTBG
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.1 A
  • Drain Source Resistance
    160 to 650 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    4.2 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN-6
  • Applications
    High Side Load Switch, PA Switch, Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others

Technical Documents
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