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NTMC083NP10M5L

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The NTMC083NP10M5L from onsemi is a MOSFET with Continous Drain Current -3.3 to 4.5 A, Drain Source Resistance 59.4 to 198 milliohm, Drain Source Breakdown Voltage -100 to 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to 3 V. Tags: Surface Mount. More details for NTMC083NP10M5L can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMC083NP10M5L
  • Manufacturer
    onsemi
  • Description
    -100 to 100 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.3 to 4.5 A
  • Drain Source Resistance
    59.4 to 198 milliohm
  • Drain Source Breakdown Voltage
    -100 to 100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to 3 V
  • Gate Charge
    3 to 8.4 nC
  • Power Dissipation
    0.6 to 3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Power Tools, Battery Operated Vacuums, UAV/Drones, Material Handling, Motor Drive, Home Automation

Technical Documents
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