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NTMD5838NLR2G

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The NTMD5838NLR2G from onsemi is a MOSFET with Continous Drain Current 8.9 A, Drain Source Resistance 16.2 to 36.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for NTMD5838NLR2G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMD5838NLR2G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 8.6 to 17 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8.9 A
  • Drain Source Resistance
    16.2 to 36.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    8.6 to 17 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    General Purpose application

Technical Documents
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