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NTMD6N02R2G

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The NTMD6N02R2G from onsemi is a MOSFET with Continous Drain Current 6.5 A, Drain Source Resistance 28 to 49 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to -12 V, Gate Source Threshold Voltage 0.6 to 1.2 V. Tags: Surface Mount. More details for NTMD6N02R2G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMD6N02R2G
  • Manufacturer
    onsemi
  • Description
    -12 to -12 V, 12 to 20 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.5 A
  • Drain Source Resistance
    28 to 49 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to -12 V
  • Gate Source Threshold Voltage
    0.6 to 1.2 V
  • Gate Charge
    12 to 20 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    DC-DC Converters, Low Voltage Motor Control, Power Management in Portable and Battery-Powered Products, for example, Computers, Printers, Cellular and Cordless Telephones and PCMCIA Cards

Technical Documents
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