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NTMFD016N06CT1G

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The NTMFD016N06CT1G from onsemi is a MOSFET with Continous Drain Current 32 A, Drain Source Resistance 13.6 to 16.3 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTMFD016N06CT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFD016N06CT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 6.9 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    32 A
  • Drain Source Resistance
    13.6 to 16.3 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    6.9 nC
  • Power Dissipation
    36 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN8
  • Applications
    Power Tools, Battery Operated Vacuums, UAV/Drones, Material Handling, BMS/Storage, Home Automation

Technical Documents
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