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NTMFD1D4N02P1E

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The NTMFD1D4N02P1E from onsemi is a MOSFET with Continous Drain Current 10 to 155 A, Drain Source Resistance 1.04 to 4.2 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTMFD1D4N02P1E can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFD1D4N02P1E
  • Manufacturer
    onsemi
  • Description
    -12 to 16 V, 7.2 to 48.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10 to 155 A
  • Drain Source Resistance
    1.04 to 4.2 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -12 to 16 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    7.2 to 48.6 nC
  • Power Dissipation
    0.96 to 41 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    DC-DC Converters, System Voltage Rails

Technical Documents
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