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NTMFS010N10GTWG

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The NTMFS010N10GTWG from onsemi is a MOSFET with Continous Drain Current 8 to 83 A, Drain Source Resistance 8.6 to 10.8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTMFS010N10GTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFS010N10GTWG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 58.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 to 83 A
  • Drain Source Resistance
    8.6 to 10.8 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    58.5 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    48 V Hot Swap System, Load Switch, Soft Start, E-Fuse

Technical Documents
View details on the manufacturer's website
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