NTMFS0D7N04XLT1G

Note : Your request will be directed to onsemi.

The NTMFS0D7N04XLT1G from onsemi is a MOSFET with Continous Drain Current 247 to 349 A, Drain Source Resistance 0.58 to 1.1 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.2 V. Tags: Surface Mount. More details for NTMFS0D7N04XLT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTMFS0D7N04XLT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 96 nC, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    247 to 349 A
  • Drain Source Resistance
    0.58 to 1.1 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.2 V
  • Gate Charge
    96 nC
  • Switching Speed
    7 to 64 ns
  • Power Dissipation
    167 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5
  • Applications
    High Switching Frequency DC-DC Conversion, Synchronous Rectification

Technical Documents

Latest MOSFETs

View more products