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NTMFS0D8N02P1ET1G

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The NTMFS0D8N02P1ET1G from onsemi is a MOSFET with Continous Drain Current 365 A, Drain Source Resistance 0.44 to 0.8 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTMFS0D8N02P1ET1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFS0D8N02P1ET1G
  • Manufacturer
    onsemi
  • Description
    -12 to 16 V, 52 to 116 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    365 A
  • Drain Source Resistance
    0.44 to 0.8 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -12 to 16 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    52 to 116 nC
  • Power Dissipation
    139 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8 FLAT LEAD
  • Applications
    DC-DC Converters, Power Load Switch, Notebook Battery Management

Technical Documents
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