NTMFS4C01NT3G

Note : Your request will be directed to onsemi.

The NTMFS4C01NT3G from onsemi is a MOSFET with Continous Drain Current 47 to 303 A, Drain Source Resistance 0.71 to 1.2 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.2 V. Tags: Surface Mount. More details for NTMFS4C01NT3G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTMFS4C01NT3G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 63 to 139 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    47 to 303 A
  • Drain Source Resistance
    0.71 to 1.2 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.2 V
  • Gate Charge
    63 to 139 nC
  • Power Dissipation
    134 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8FL

Technical Documents

Latest MOSFETs

View more products