1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTMFS4D2N10MDT1G

NTMFS4D2N10MDT1G

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NTMFS4D2N10MDT1G from onsemi is a MOSFET with Continous Drain Current 113 A, Drain Source Resistance 3.8 to 7.1 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTMFS4D2N10MDT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTMFS4D2N10MDT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 40 to 60 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    113 A
  • Drain Source Resistance
    3.8 to 7.1 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    40 to 60 nC
  • Power Dissipation
    132 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8 FLAT LEAD
  • Applications
    Primary Switch in Isolated DC-DC Converter, Synchronous Rectification (SR) in DC-DC and AC-DC, AC-DC Adapters (USB PD) SR, Load Switch, Hotswap, and ORing Switch, BLDC Motor and Solar Inverter

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products