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NTMFS5832NLT1G

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The NTMFS5832NLT1G from onsemi is a MOSFET with Continous Drain Current 111 A, Drain Source Resistance 3.1 to 6.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for NTMFS5832NLT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFS5832NLT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 25 to 51 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    111 A
  • Drain Source Resistance
    3.1 to 6.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    25 to 51 nC
  • Power Dissipation
    96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5 (SO-8FL)
  • Applications
    DC-DC Conversion, Synchronous Rectification, Motor Drive

Technical Documents
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