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NTMFS5H414NLT1G

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NTMFS5H414NLT1G Image

The NTMFS5H414NLT1G from onsemi is a MOSFET with Continous Drain Current 210 A, Drain Source Resistance 1.1 to 2 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTMFS5H414NLT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFS5H414NLT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 35 to 75 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    210 A
  • Drain Source Resistance
    1.1 to 2 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    35 to 75 nC
  • Power Dissipation
    110 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5 (SO-8FL)
  • Applications
    High Performance DC-DC Converters, AC-DC Synchronous Rectifier, Motor Control

Technical Documents
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