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NTMJS0D8N04CLTWG

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NTMJS0D8N04CLTWG Image

The NTMJS0D8N04CLTWG from onsemi is a MOSFET with Continous Drain Current 368 A, Drain Source Resistance 0.6 to 1.15 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTMJS0D8N04CLTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMJS0D8N04CLTWG
  • Manufacturer
    onsemi
  • Description
    20 V, 78 to 162 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    368 A
  • Drain Source Resistance
    0.6 to 1.15 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    78 to 162 nC
  • Power Dissipation
    180 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-8
  • Applications
    Primary Switch in DC-DC Converter, Synchronous rectifier in power Supply

Technical Documents
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