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NTMS4177PR2G

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The NTMS4177PR2G from onsemi is a MOSFET with Continous Drain Current -11.4 A, Drain Source Resistance 10 to 19 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.5 V. Tags: Surface Mount. More details for NTMS4177PR2G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMS4177PR2G
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11.4 A
  • Drain Source Resistance
    10 to 19 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1.5 V
  • Gate Charge
    29 to 55 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Load Switches, Notebook PC’s, Desktop PC’s

Technical Documents
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