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NTMT080N60S5

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The NTMT080N60S5 from onsemi is a MOSFET with Continous Drain Current 25 to 40 A, Drain Source Resistance 64 to 80 milli-ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.4 to 4 V. Tags: Surface Mount. More details for NTMT080N60S5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMT080N60S5
  • Manufacturer
    onsemi
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 to 40 A
  • Drain Source Resistance
    64 to 80 milli-ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.4 to 4 V
  • Gate Charge
    56.2 nC
  • Power Dissipation
    212 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TDFN4
  • Applications
    Telecom / Server Power Supplies, EV Charger / UPS / Solar / Industrial Power Supplies

Technical Documents
View details on the manufacturer's website
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