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NTMT185N60S5H

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NTMT185N60S5H Image

The NTMT185N60S5H from onsemi is a MOSFET with Continous Drain Current 15 A, Drain Source Resistance 148 to 185 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.7 to 4.3 V. Tags: Surface Mount. More details for NTMT185N60S5H can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMT185N60S5H
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 25 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15 A
  • Drain Source Resistance
    148 to 185 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.7 to 4.3 V
  • Gate Charge
    25 nC
  • Power Dissipation
    116 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TDFN4
  • Applications
    Computing / Display Power Supplies, Telecom / Server Power Supplies, Lighting / Charger/ Adapter / Industrial Power Supplies

Technical Documents
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