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NTMTS0D4N04CLTXG

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NTMTS0D4N04CLTXG Image

The NTMTS0D4N04CLTXG from onsemi is a MOSFET with Continous Drain Current 553.8 A, Drain Source Resistance 0.6 to 0.4 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for NTMTS0D4N04CLTXG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMTS0D4N04CLTXG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 163 to 341 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    553.8 A
  • Drain Source Resistance
    0.6 to 0.4 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    163 to 341 nC
  • Power Dissipation
    244 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNW-8
  • Applications
    Power Tools, Battery Operated Vacuums, UAV/Drones, Material Handling, BMS/Storage, Home Automation

Technical Documents
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