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NTMTSC1D6N10MCTXG

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NTMTSC1D6N10MCTXG Image

The NTMTSC1D6N10MCTXG from onsemi is a MOSFET with Continous Drain Current 267 A, Drain Source Resistance 1.42 to 4.3 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTMTSC1D6N10MCTXG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMTSC1D6N10MCTXG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 106 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    267 A
  • Drain Source Resistance
    1.42 to 4.3 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    106 nC
  • Power Dissipation
    291 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNW-8
  • Applications
    DC- DC power Switch, AC-DC Synchronous rectifier, Load Switch

Technical Documents
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