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NTMTSC4D2N10G

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NTMTSC4D2N10G Image

The NTMTSC4D2N10G from onsemi is a MOSFET with Continous Drain Current 178 A, Drain Source Resistance 4.2 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for NTMTSC4D2N10G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMTSC4D2N10G
  • Manufacturer
    onsemi
  • Description
    4 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    178 A
  • Drain Source Resistance
    4.2 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    159 nC
  • Power Dissipation
    267 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNW-8
  • Applications
    48 V Hot Swap System, Load Switch, Soft-Start, E-Fuse

Technical Documents
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