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NTMYS4D5N04CTWG

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NTMYS4D5N04CTWG Image

The NTMYS4D5N04CTWG from onsemi is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 3.6 to 4.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for NTMYS4D5N04CTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMYS4D5N04CTWG
  • Manufacturer
    onsemi
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    3.6 to 4.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    18 nC
  • Power Dissipation
    55 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK4
  • Applications
    Point of Load Modules, High Performance DC-DC Converter, Secondary Syn. Rectification, DC Motor Drive

Technical Documents
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