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NTNS3C68NZT5G

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NTNS3C68NZT5G Image

The NTNS3C68NZT5G from onsemi is a MOSFET with Continous Drain Current 0.898 A, Drain Source Resistance 120 to 440 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for NTNS3C68NZT5G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTNS3C68NZT5G
  • Manufacturer
    onsemi
  • Description
    12 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.898 A
  • Drain Source Resistance
    120 to 440 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    1.8 nC
  • Power Dissipation
    0.219 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-883
  • Applications
    High Side Switch, High Speed Interfacing, Level Shift and Translate, Optimized for Power Management in Ultra Portable Solutions

Technical Documents
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