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NTPF360N65S3H

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NTPF360N65S3H Image

The NTPF360N65S3H from onsemi is a MOSFET with Continous Drain Current 0.41666666667, Drain Source Resistance 296 to 360 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.4 to 4 V. Tags: Through Hole. More details for NTPF360N65S3H can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTPF360N65S3H
  • Manufacturer
    onsemi
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.41666666667
  • Drain Source Resistance
    296 to 360 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.4 to 4 V
  • Gate Charge
    17.5 nC
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3 FullPak
  • Applications
    Computing / Display Power Supplies, Telecom / Server Power Supplies, Industrial Power Supplies, Lighting / Charger / Adapter

Technical Documents
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