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NTR2101PT1G

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The NTR2101PT1G from onsemi is a MOSFET with Continous Drain Current -3.7 A, Drain Source Resistance 39 to 120 milliohm, Drain Source Breakdown Voltage -8 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for NTR2101PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTR2101PT1G
  • Manufacturer
    onsemi
  • Description
    -8 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.7 A
  • Drain Source Resistance
    39 to 120 milliohm
  • Drain Source Breakdown Voltage
    -8 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    12 to 15 nC
  • Power Dissipation
    0.96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    High Side Load Switch, DC-DC Conversion, Cell Phone, Notebook, PDAs

Technical Documents
View details on the manufacturer's website
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