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NTR3A30PZT1G

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The NTR3A30PZT1G from onsemi is a MOSFET with Continous Drain Current -5.5 A, Drain Source Resistance 31 to 73 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for NTR3A30PZT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTR3A30PZT1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.5 A
  • Drain Source Resistance
    31 to 73 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    17.6 nC
  • Power Dissipation
    1.58 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    High Side Load Switch, Battery Switch, Optimized for Power Management Applications for Portable Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and Others

Technical Documents
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