1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTR4101PT1G

NTR4101PT1G

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NTR4101PT1G from onsemi is a MOSFET with Continous Drain Current -3.2 A, Drain Source Resistance 70 to 210 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.2 to -0.4 V. Tags: Surface Mount. More details for NTR4101PT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTR4101PT1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.2 A
  • Drain Source Resistance
    70 to 210 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.2 to -0.4 V
  • Gate Charge
    7.5 to 8.5 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Load/Power Management for Portables, Load/Power Management for Computing, Charging Circuits and Battery Protection

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products