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NTR4170NT1G

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NTR4170NT1G Image

The NTR4170NT1G from onsemi is a MOSFET with Continous Drain Current 3.9 A, Drain Source Resistance 45 to 110 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.4 V. Tags: Surface Mount. More details for NTR4170NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTR4170NT1G
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.9 A
  • Drain Source Resistance
    45 to 110 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.4 V
  • Gate Charge
    4.76 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Converters for Portables, Battery Management, Load/Power Switch

Technical Documents
View details on the manufacturer's website
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