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NTR4502PT1G

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The NTR4502PT1G from onsemi is a MOSFET with Continous Drain Current -1.95 A, Drain Source Resistance 155 to 350 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for NTR4502PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTR4502PT1G
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.95 A
  • Drain Source Resistance
    155 to 350 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    6 to 10 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    DC to DC Conversion, Load/Power Switch for Portables and Computing, Motherboard, Notebooks, Camcorders, Digital Camera’s, Battery Charging Circuits

Technical Documents
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