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NTS4173PT1G

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The NTS4173PT1G from onsemi is a MOSFET with Continous Drain Current -1.3 A, Drain Source Resistance 90 to 280 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 to -0.7 V. Tags: Surface Mount. More details for NTS4173PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTS4173PT1G
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.3 A
  • Drain Source Resistance
    90 to 280 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 to -0.7 V
  • Gate Charge
    4.8 to 10.1 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-70 (SOT-323)
  • Applications
    Load Switch, Low Current Inverter and DC-DC Converters, Power Switch for Printers, Communication Equipment

Technical Documents
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