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NTTFD022N10C

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NTTFD022N10C Image

The NTTFD022N10C from onsemi is a MOSFET with Continous Drain Current 24 A, Drain Source Resistance 18.7 to 61 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTTFD022N10C can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFD022N10C
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    24 A
  • Drain Source Resistance
    18.7 to 61 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    5.89 to 9 nC
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WQFN-12
  • Applications
    Computing, Communications, General Purpose Point of Load

Technical Documents
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