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NTTFS008P03P8Z

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The NTTFS008P03P8Z from onsemi is a MOSFET with Continous Drain Current -96 A, Drain Source Resistance 2.5 to 6.5 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for NTTFS008P03P8Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFS008P03P8Z
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -96 A
  • Drain Source Resistance
    2.5 to 6.5 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    82 to 134 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Power Load Switch, Protection: Reverse Current, Over Voltage, and Reverse Negative Voltage, Battery Management

Technical Documents
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