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NTTFS1D2N02P1E

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The NTTFS1D2N02P1E from onsemi is a MOSFET with Continous Drain Current 180 A, Drain Source Resistance 0.86 to 1.2 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTTFS1D2N02P1E can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFS1D2N02P1E
  • Manufacturer
    onsemi
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    180 A
  • Drain Source Resistance
    0.86 to 1.2 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -12 to 16 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    24 to 54 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    DC-DC Converters, Power Load Switch, Notebook Battery Management

Technical Documents
View details on the manufacturer's website
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