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NTTFS1D8N02P1E

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The NTTFS1D8N02P1E from onsemi is a MOSFET with Continous Drain Current 152 A, Drain Source Resistance 1.05 to 1.8 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTTFS1D8N02P1E can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFS1D8N02P1E
  • Manufacturer
    onsemi
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    152 A
  • Drain Source Resistance
    1.05 to 1.8 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -12 to 16 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    17.1 to 39 nC
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    DC-DC Converters, Power Load Switch, Notebook Battery Management

Technical Documents
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